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| PB1000 ... PB1010, PB1000S ... PB1010S PB1000 ... PB1010, PB1000S ... PB1010S Silicon-Bridge-Rectifiers Silizium-Bruckengleichrichter Version 2005-05-09 Type: PB... 12.70.3 = Type: PB...S 10.90.5 Nominal current - Nennstrom Alternating input voltage Eingangswechselspannung Type: PB... O 3.6 _ 10 A 35...700 V 10.90.5 O 3.9 19 x 19 x 6.8 [mm] 5.5 g Plastic case - Kunststoffgehause Weight approx. - Gewicht ca. Type: PB...S 15.1 x 15.1 x 6.3 [mm] Plastic case with Al-bottom - Kunststoffgehause mit Alu-Boden Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform lose im Karton = 190.2 15.1 0.2 6.80.2 6.3 0.5 3.5 g 19 1.2 1.0 Dimensions - Mae [mm] Recognized Product - Underwriters Laboratories Inc.(R) File E175067 Anerkanntes Produkt - Underwriters Laboratories Inc.(R) Nr. E175067 Maximum ratings Type Typ PB1000 / PB1000S PB1001 / PB1001S PB1002 / PB1002S PB1004 / PB1004S PB1006 / PB1006S PB1008 / PB1008S PB1010 / PB1010S Max. alternating input voltage Max. Eingangswechselspannung VRRM [V] 35 70 140 280 420 560 700 Grenzwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRSM [V] 1) 50 100 200 400 600 800 1000 19 Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur f > 15 Hz TA = 25C TA = 25C IFRM IFSM i2t Tj TS 50 A 2) 135/150 A 1) 93 A2s -50...+150C -50...+150C 1 2 Per diode - Pro Diode Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschlussdrahte in 5 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 1 PB1000 ... PB1010, PB1000S ... PB1010S Characteristics Max. current with cooling fin 300 cm Dauergrenzstrom mit Kuhlblech 300 cm2 2 Kennwerte TA = 50C Tj = 25C Tj = 25C R-load C-load IF = 5 A VR = VRRM IFAV VF IR VISO RthC M4 10.0 A 8.0 A < 1.2 V 1) < 10 A > 2500 V < 3.3 K/W Forward voltage Durchlass-Spannung Leakage current Sperrstrom Isolation voltage terminals to case Isolationsspannung Anschlusse zum Gehause Thermal Resistance Junction - Case Warmewiderstand Sperrschicht - Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment 9 10% lb.in 1 10% Nm 120 [%] 100 102 [A] 10 Tj = 125C 80 Tj = 25C 60 1 40 10-1 20 IFAV 0 0 TA 50 100 150 [C] IF 10-2 150a-(5a-1.2v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Rated forward current vs. ambient temperature Zul. Richtstrom in Abh. von der Umgebungstemp. Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Per diode - Pro Diode http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
Price & Availability of PB100007
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